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MMBD914
?2001 Fairchild Semiconductor Corporation
MMBD914, Rev. C
Small Signal Diode
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD914
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 100 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
1
2
3
5D
3
1
2
SOT-23
Connection Diagram
3
1
2NC
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 μA
75
V
100
V
IR = 100 μA
VF
Forward Voltage
IF = 10 mA 1.0
V
IR
Reverse Current
VR = 20 V
25
nA
VR = 20 V, TA = 150°C
50
μA
VR = 75 V
5.0
μA
CT
Total Capacitance
VR = 0, f = 1.0 MHz
4.0 pF
trr
Reverse Recovery Time IF = 10 mA, VR = 6.0V,
4.0 ns
IRR = 1.0 mA, RL = 100 ?
VFR
Peak Forward Recovery Voltage IF
= 50 mA PEAK SQUARE
2.5 V
WAVE PULSE WIDTH = 0.1 μS
5 kHz – 100 kHz REP RATE
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